The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 12, 2024
Filed:
May. 10, 2021
Applicant:
Parabellum Strategic Opportunities Fund Llc, Wilmington, DE (US);
Inventors:
Assignee:
Parabellum Strategic Opportunities Fund LLC, Wilmington, DE (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/786 (2006.01); B82Y 10/00 (2011.01); H01L 21/02 (2006.01); H01L 21/306 (2006.01); H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0673 (2013.01); B82Y 10/00 (2013.01); H01L 21/02381 (2013.01); H01L 21/30604 (2013.01); H01L 29/0649 (2013.01); H01L 29/0843 (2013.01); H01L 29/41725 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/785 (2013.01); H01L 29/78654 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract
A semiconductor device includes first channel layers disposed over a substrate, a first source/drain region disposed over the substrate, a gate dielectric layer disposed on and wrapping each of the first channel layers, a gate electrode layer disposed on the gate dielectric layer and wrapping each of the first channel layers, and a liner semiconductor layer disposed between the first channel layers and the first source/drain region.