The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 09, 2024
Filed:
May. 13, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsin-Chu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); B82Y 10/00 (2011.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/775 (2006.01); H01L 29/786 (2006.01); H01L 29/165 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7856 (2013.01); B82Y 10/00 (2013.01); H01L 29/0673 (2013.01); H01L 29/42368 (2013.01); H01L 29/42376 (2013.01); H01L 29/42392 (2013.01); H01L 29/66439 (2013.01); H01L 29/66545 (2013.01); H01L 29/66772 (2013.01); H01L 29/66795 (2013.01); H01L 29/775 (2013.01); H01L 29/78618 (2013.01); H01L 29/78654 (2013.01); H01L 29/78696 (2013.01); H01L 29/165 (2013.01); H01L 2029/7858 (2013.01);
Abstract
A device includes a first semiconductor strip, a first gate dielectric encircling the first semiconductor strip, a second semiconductor strip overlapping the first semiconductor strip, and a second gate dielectric encircling the second semiconductor strip. The first gate dielectric contacts the first gate dielectric. A gate electrode has a portion over the second semiconductor strip, and additional portions on opposite sides of the first and the second semiconductor strips and the first and the second gate dielectrics.