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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11972981 B1

PDFFull Text
Date of Patent:
Apr. 30, 2024

Filed:

Jun. 17, 2022

Finfet channel on oxide structures and related methods

Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Kuo-Cheng Ching, Hsinchu County, TW;

Ching-Wei Tsai, Hsinchu, TW;

Ying-Keung Leung, Hsinchu, TW;

Assignee:

TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., Hsinchu, TW;

Attorney:

Haynes and Boone, LLP

Primary Examiner:

Marvin Payen

Int. Cl.
CPC ...
H01L 21/8234 (2006.01); H01L 27/088 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/161 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 21/823412 (2013.01); H01L 21/823431 (2013.01); H01L 21/823468 (2013.01); H01L 21/823481 (2013.01); H01L 27/0886 (2013.01); H01L 29/0653 (2013.01); H01L 29/16 (2013.01); H01L 29/161 (2013.01); H01L 29/66545 (2013.01); H01L 29/66795 (2013.01); H01L 29/66818 (2013.01); H01L 29/7848 (2013.01); H01L 29/785 (2013.01);
Abstract

A method for fabricating a semiconductor device having a substantially undoped channel region includes forming a plurality of fins extending from a substrate. In various embodiments, each of the plurality of fins includes a portion of a substrate, a portion of a first epitaxial layer on the portion of the substrate, and a portion of a second epitaxial layer on the portion of the first epitaxial layer. The portion of the first epitaxial layer of each of the plurality of fins is oxidized, and a liner layer is formed over each of the plurality of fins. Recessed isolation regions are then formed adjacent to the liner layer. The liner layer may then be etched to expose a residual material portion (e.g., Ge residue) adjacent to a bottom surface of the portion of the second epitaxial layer of each of the plurality of fins, and the residual material portion is removed.

Find Patent Forward Citations

Ching, Kuo-Cheng. (2024). Finfet channel on oxide structures and related methods (U.S. Patent No. 11972981). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11972981

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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