Yin-Hao Wu

Title: Innovations of Yin-Hao Wu

Introduction

Yin-Hao Wu is a notable inventor based in Taichung, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 3 patents. His work focuses on enhancing memory device structures and improving the quality of semiconductor substrates.

Latest Patents

Yin-Hao Wu's latest patents include a method for forming a memory device structure. This method involves providing a substrate, a first dielectric layer, a conductive via, a magnetic tunnel junction cell, a first etch stop layer, and a first spacer layer. The substrate is divided into a first region and a second region, with the conductive via passing through the first dielectric layer over the first region. The process includes removing the first etch stop layer and the first dielectric layer that are not covered by the respective spacer layers.

Another significant patent is a method for smoothing group III nitride semiconductor substrates. This invention discloses a technique to decrease bowing in these substrates by etching a specific face under an appropriate etching recipe and time. The resulting structures help release compressive stresses, thereby increasing the bowing radius and reducing the bowing phenomenon.

Career Highlights

Yin-Hao Wu has worked at prestigious institutions, including National Yang Ming Chiao Tung University and Taiwan Semiconductor Manufacturing Company. His experience in these organizations has allowed him to develop and refine his innovative techniques in semiconductor technology.

Collaborations

Yin-Hao Wu has collaborated with notable colleagues, including Wei-I Lee and Yen-Hsien Yeh. Their combined expertise has contributed to advancements in their respective fields.

Conclusion

Yin-Hao Wu's contributions to semiconductor technology through his patents and collaborations highlight his role as an influential inventor. His innovative methods continue to impact the industry positively.