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Yin-Fu Huang

USPTO Granted Patents = 16 (Patent Applications = 2)

Average Co-Inventor Count = 3.4

ph-index = 1

Forward Citations = 6(Granted Patents)

Location History:

Taiwan, TW (2015)
Tainan, TW (2012 - 2016)
Hsin-Chu, TW (2007 - 2018)

Company Filing History:

16 out of 3,603

Macronix International Co., Ltd.

Years Active: 2007-2018

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16 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 9899513 - Lateral diffused metal oxide semiconductor transistor and manufacturing method thereof (2018-02-20),

2. 9231078 - Semiconductor and manufacturing method thereof (2016-01-05),

3. 9082787 - Semiconductor structure and manufacturing process thereof (2015-07-14),

4. 9029947 - Field device and method of operating high voltage semiconductor device applied with the same (2015-05-12),

5. 8928095 - Semiconductor device having reduced leakage current at breakdown and method of fabricating thereof (2015-01-06),

6. 8896061 - Field device and method of operating high voltage semiconductor device applied with the same (2014-11-25),

7. 8691653 - Semiconductor structure with reduced surface field effect and manufacturing process thereof (2014-04-08),

8. 8659080 - Semiconductor structure and manufacturing process thereof (2014-02-25),

9. 8643072 - Semiconductor structure and method for forming the same (2014-02-04),

10. 8586442 - Manufacturing method for high voltage transistor (2013-11-19),

11. 8507993 - Buried layer of an integrated circuit (2013-08-13),

12. 8476705 - High voltage semiconductor device (2013-07-02),

13. 8367511 - Manufacturing method for high voltage transistor (2013-02-05),

14. 8304830 - LDPMOS structure for enhancing breakdown voltage and specific on resistance in biCMOS-DMOS process (2012-11-06),

15. 8258042 - Buried layer of an integrated circuit (2012-09-04),

Title: Innovations by Yin-Fu Huang

Introduction

Yin-Fu Huang is an inventor based in Tainan City, Taiwan. He has made significant contributions to the field of semiconductor technology. His work focuses on enhancing the performance of devices through innovative structures and methods.

Latest Patent Applications

Yin-Fu Huang has filed a patent application titled "LDPMOS STRUCTURE FOR ENHANCING BREAKDOWN VOLTAGE AND SPECIFIC ON RESISTANCE IN BICMOS-DMOS PROCESS." This application describes an LDPMOS structure that features enhanced breakdown voltage and specific on-resistance. The invention includes a P-field implanted layer formed in a drift region of the structure, which surrounds a tightly doped drain region. This design effectively increases breakdown voltage while maintaining a relatively low specific on-resistance.

Conclusion

Yin-Fu Huang's innovative approach to semiconductor structures demonstrates his commitment to advancing technology in this field. His contributions, particularly through his latest patent application, highlight the potential for improved device performance.

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