The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Nov. 25, 2014
Filed:
Sep. 14, 2012
An-li Cheng, Tainan, TW;
Miao-chun Chung, Toufen Township, Miaoli County, TW;
Chih-chia Hsu, Zhongli, TW;
Yin-fu Huang, Tainan, TW;
An-Li Cheng, Tainan, TW;
Miao-Chun Chung, Toufen Township, Miaoli County, TW;
Chih-Chia Hsu, Zhongli, TW;
Yin-Fu Huang, Tainan, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
A field device and method of operating high voltage semiconductor device applied with the same are provided. The field device includes a first well having a second conductive type and second well having a first conductive type both formed in the substrate (having the first conductive type) and extending down from a surface of the substrate, the second well adjacent to one side of the first well and the substrate is at the other side of the first well; a first doping region having the first conductive type and formed in the second well, the first doping region spaced apart from the first well; a conductive line electrically connected to the first doping region and across the first well region; and a conductive body insulatively positioned between the conductive line and the first well, and the conductive body correspondingly across the first well region.