Tainan, Taiwan

An-Li Cheng

This inventor holds 3 USPTO granted patents. Top assignee: Macronix International Co., Ltd.. Active years: 2014-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: An-Li Cheng. Retrieved from https://idiyas.com/inventor/an-li-cheng

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

% Patents Active = 100.0

Average Co-Inventor Count = 4.3

ph-index = 1


Company Filing History:


Years Active: 2014-2015

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3 patents (USPTO):Explore Patents

Title: An-Li Cheng: Innovator in High Voltage Semiconductor Technology

Introduction

An-Li Cheng is a notable inventor based in Tainan, Taiwan. He has made significant contributions to the field of semiconductor technology, particularly in high voltage applications. With a total of 3 patents to his name, Cheng's work is recognized for its innovative approaches and practical applications.

Latest Patents

Cheng's latest patent focuses on a field device and method of operating high voltage semiconductor devices. This invention includes a first well of a second conductive type and a second well of a first conductive type, both formed in a substrate. The design allows for effective operation of high voltage semiconductor devices, enhancing their performance and reliability.

Career Highlights

Cheng is currently employed at Macronix International Co., Ltd., where he continues to develop cutting-edge technologies in the semiconductor industry. His expertise in high voltage applications has positioned him as a key player in his field.

Collaborations

Cheng has collaborated with several talented individuals, including Yin-Fu Huang and Miao-Chun Chung, who contribute to the innovative environment at Macronix International Co., Ltd. Their teamwork fosters advancements in semiconductor technology.

Conclusion

An-Li Cheng's contributions to high voltage semiconductor technology exemplify the spirit of innovation. His patents and collaborations reflect a commitment to advancing the field and improving device performance.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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