The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jul. 02, 2013
Filed:
Dec. 08, 2010
Applicants:
Hsuehi Huang, Lin-Yuan Township, TW;
Yin-fu Huang, Hsin-Chu, TW;
Shih-chin Lien, Sinjhuang, TW;
Inventors:
Assignee:
Macronix International Co., Ltd., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
Abstract
A semiconductor device for a high voltage application includes a doped source base region, an N+ source region, a P+ source region and a gate structure. The doped source base region has P-type. The N+ source region extends downwards into the doped source base region. The P+ source region is close to the N+ source region, extends downwards into the doped source base region, and is doped heavier than the doped source base region. The gate structure is coupled to the N+ source region and is near to the P+ source region.