The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 04, 2012
Filed:
Aug. 28, 2009
Yin-fu Huang, Tainan, TW;
Ming Rong Chang, Taipei, TW;
Shih-chin Lien, Sinjhuang, TW;
Macronix International Co., Ltd., Hsinchu, TW;
Abstract
Various aspects of the technology are directed to integrated circuit manufacturing methods and integrated circuits. In one method, a first charge type buried layer in a semiconductor material of an integrated circuit by implanting first charge type dopants of the first charge type buried layer through a sacrificial oxide over the semiconductor material and through an intermediate region of the semiconductor material transited by the implanted first charge type dopants. When the implanted dopants pass through the sacrificial oxide, damage to the semiconductor crystalline lattice is averted. If the sacrificial oxide were absent, the implanted dopants would have passed through and damaged the semiconductor crystalline lattice instead. Later, a pre-anneal oxide is grown and removed.