Company Filing History:

6 out of 752

Alpha Omega Semiconductor Inc.

patents

6 out of 1,264

Integrated Device Technology, Inc.

patents

1 out of 1

Alpha and Omage Semiconductor Inc.

patent

Years Active: 2004-2019

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13 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10424654 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2019-09-24),

2. 10020380 - Power device with high aspect ratio trench contacts and submicron pitches between trenches (2018-07-10),

3. 9865694 - Split-gate trench power mosfet with protected shield oxide (2018-01-09),

4. 9741808 - Split-gate trench power MOSFET with protected shield oxide (2017-08-22),

5. 9679822 - Method for monitoring epitaxial growth geometry shift (2017-06-13),

6. 9421567 - Recycle photochemical to reduce cost of material and environmental impact (2016-08-23),

7. 9281368 - Split-gate trench power MOSFET with protected shield oxide (2016-03-08),

8. 7349752 - Dynamically coupled metrology and lithography (2008-03-25),

9. 7235336 - Method for determining photoresist thickness and structure formed using determined photoresist thickness (2007-06-26),

10. 7129149 - Method for forming shallow trench isolation structure with anti-reflective liner (2006-10-31),

11. 6913872 - Dual-wavelength exposure for reduction of implant shadowing (2005-07-05),

12. 6797456 - Dual-layer deep ultraviolet photoresist process and structure (2004-09-28),

13. 6733936 - Method for generating a swing curve and photoresist feature formed using swing curve (2004-05-11),

Title: Yiming Gu: Innovator in Semiconductor Power Devices

Introduction

Yiming Gu is a prominent inventor based in Hillsboro, Oregon, known for his significant contributions to the field of semiconductor technology. With a total of 13 patents to his name, Gu has made remarkable advancements in the design and functionality of power devices.

Latest Patents

One of Gu's latest patents is titled "Power device with high aspect ratio trench contacts and submicron pitches between trenches." This invention discloses a semiconductor power device that is integrated into a semiconductor substrate, which includes active cell areas and a termination area. The device features a plurality of gate trenches formed at the top portion of the semiconductor substrate within the active cell area. Each gate trench is partially filled with a conductive gate material, while the top portion is filled with a high-density plasma (HDP) insulation layer. Additionally, the semiconductor power device comprises recessed mesa areas of the substrate located between the gate trenches. These mesa areas have a top surface that is vertically below the top surface of the HDP insulation layer, creating a stick-out boundary-defining layer that surrounds the recessed mesa areas in the active cell areas.

Career Highlights

Throughout his career, Yiming Gu has worked with notable companies in the semiconductor industry, including Alpha & Omega Semiconductor Corporation and Integrated Device Technology, Inc. His work has significantly impacted the development of advanced semiconductor technologies.

Collaborations

Gu has collaborated with esteemed colleagues such as Yeeheng Lee and Hongyong Xue, contributing to various innovative projects in the semiconductor field.

Conclusion

Yiming Gu's contributions to semiconductor power devices exemplify his expertise and dedication to innovation. His patents reflect a commitment to advancing technology and improving device performance in the semiconductor industry.

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