The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 05, 2005

Filed:

Sep. 30, 2002
Applicants:

John L. Sturtevant, Beaverton, OR (US);

Yiming Gu, Hillsboro, OR (US);

Dyiann Chou, Portland, OR (US);

Chantha Lom, Beaverton, OR (US);

Inventors:

John L. Sturtevant, Beaverton, OR (US);

Yiming Gu, Hillsboro, OR (US);

Dyiann Chou, Portland, OR (US);

Chantha Lom, Beaverton, OR (US);

Assignee:

Integrated Device Technology, Inc., Santa Clara, CA (US);

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G03F007/20 ;
U.S. Cl.
CPC ...
Abstract

A method for generating a photoresist structure is disclosed in which a layer of photoresist is deposited over a semiconductor substrate. In a first exposure, the layer of photoresist is exposed to deep ultraviolet light. A second exposure is then performed using a different wavelength of light to pattern the layer of photoresist. The photoresist is then developed so as to form a photoresist structure having reduced thickness and rounded corners. This gives a photoresist structure having a reduced shadow area. An angled ion implant can then be performed using the photoresist structure as a mask.


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