Yi-Huang Wu is a prominent inventor based in Zhubei, Taiwan. He has made significant contributions to the field of memory devices, holding a total of 8 patents. His work focuses on advanced technologies that enhance the performance and efficiency of memory systems.

Latest Patents

Among his latest patents, Wu has developed a memory device featuring a resistance switching layer. This innovative memory device includes a bottom electrode, a resistance switching element positioned over the bottom electrode, a top electrode above the resistance switching element, and a dielectric layer that surrounds all components. The resistance switching element has a first portion located between the top electrode and the dielectric layer. Additionally, he has patented a method for manufacturing this memory device, which involves etching an opening in a first dielectric layer, forming the necessary components within that opening, and creating an electrode via connected to the top surface of the top electrode.

Career Highlights

Wu is currently employed at Taiwan Semiconductor Manufacturing Company Limited, a leading firm in the semiconductor industry. His work at this company has allowed him to push the boundaries of memory technology and contribute to the advancement of electronic devices.

Collaborations

Throughout his career, Wu has collaborated with notable colleagues, including Chih-Lin Wang and Hsin-Hsiang Tseng. These partnerships have fostered innovation and have been instrumental in the development of cutting-edge memory solutions.

Conclusion

Yi-Huang Wu is a key figure in the realm of memory device technology, with a strong portfolio of patents that reflect his expertise and innovative spirit. His contributions continue to shape the future of memory systems in the semiconductor industry.

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