The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 16, 2024
Filed:
Jun. 13, 2022
Applicant:
Taiwan Semiconductor Manufacturing Co., Ltd., Hsinchu, TW;
Inventors:
Hsin-Hsiang Tseng, Changhua County, TW;
Chih-Lin Wang, Hsinchu County, TW;
Yi-Huang Wu, Hsinchu County, TW;
Assignee:
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD., Hsinchu, TW;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H10N 50/10 (2023.01); H10N 50/01 (2023.01); H10N 50/80 (2023.01);
U.S. Cl.
CPC ...
H10N 50/10 (2023.02); H10N 50/01 (2023.02); H10N 50/80 (2023.02);
Abstract
A method for manufacturing a memory device is provided. The method includes etching an opening in a first dielectric layer; forming a bottom electrode, a resistance switching element, and a top electrode in the opening in the first dielectric layer; forming a second dielectric layer over the bottom electrode, the resistance switching element, and the top electrode; and forming an electrode via connected to a top surface of the top electrode in the second dielectric layer.