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For the Inventor, By the Inventor

Suwon-si, South Korea

Yeoncheol Heo

USPTO Granted Patents = 13 

Average Co-Inventor Count = 2.0

ph-index = 2

Forward Citations = 10(Granted Patents)


Company Filing History:

goldMedal13 out of 131,611 
 
Samsung Electronics Co., Ltd.
 patents

Years Active: 2018-2023

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13 patents (USPTO):Explore Patents
1. 11843051 - Field effect transistor including multiple aspect trapping ratio structures (2023-12-12),
2. 11411111 - Field effect transistor including multiple aspect trapping ratio structures (2022-08-09),
3. 10950724 - Method of fabricating a semiconductor device including vertical-type field effect transistors (2021-03-16),
4. 10734521 - Field effect transistor including multiple aspect trapping ratio structures (2020-08-04),
5. 10714397 - Semiconductor device including an active pattern having a lower pattern and a pair of channel patterns disposed thereon and method for manufacturing the same (2020-07-14),
6. 10692858 - Semiconductor devices and methods of fabricating the same (2020-06-23),
7. 10453756 - Method for manufacturing a semiconductor device including a pair of channel semiconductor patterns (2019-10-22),
8. 10319715 - Semiconductor devices including separate doped regions (2019-06-11),
9. 10297687 - Semiconductor device including vertical-type field effect transistors and method of fabricating the same (2019-05-21),
10. 10211339 - Vertical transistor having a semiconductor pillar penetrating a silicide formed on the substrate surface (2019-02-19),
11. 10181526 - Field effect transistor including multiple aspect ratio trapping structures (2019-01-15),
12. 9966377 - Semiconductor devices including fin-shaped active patterns in different conductivity type regions (2018-05-08),
13. 9953883 - Semiconductor device including a field effect transistor and method for manufacturing the same (2018-04-24),

Title: Yeoncheol Heo: Innovator in Field Effect Transistor Technology

Introduction

Yeoncheol Heo is a prominent inventor based in Suwon-si, South Korea. He has made significant contributions to the field of semiconductor technology, particularly in the development of field effect transistors. With a total of 13 patents to his name, Heo continues to push the boundaries of innovation in this critical area of electronics.

Latest Patents

One of Yeoncheol Heo's latest patents focuses on a field effect transistor that includes multiple aspect trapping ratio structures. This invention relates to a method of fabricating a field-effect transistor that comprises a semiconductor substrate made of a first semiconductor material with a specific lattice constant. The design features a fin structure that incorporates a second semiconductor material with a different lattice constant. The fin structure is characterized by a lower portion that is elongated in one direction, along with several upper portions that protrude and extend in a different direction. A gate structure crosses these upper portions, enhancing the functionality of the transistor.

Career Highlights

Heo is currently employed at Samsung Electronics Co., Ltd., where he applies his expertise in semiconductor technology. His work has been instrumental in advancing the capabilities of field effect transistors, which are essential components in modern electronic devices.

Collaborations

Some of Yeoncheol Heo's notable coworkers include Mirco Cantoro and Maria Toledano Luque. Their collaborative efforts contribute to the innovative environment at Samsung Electronics, fostering advancements in technology.

Conclusion

Yeoncheol Heo stands out as a key figure in the field of semiconductor innovation. His contributions, particularly in the area of field effect transistors, highlight his commitment to advancing technology and improving electronic devices.

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