The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Feb. 19, 2019

Filed:

Jan. 03, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

YeonCheol Heo, Suwon-si, KR;

Mirco Cantoro, Suwon-si, KR;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/06 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 29/45 (2006.01); H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 29/0649 (2013.01); H01L 29/0847 (2013.01); H01L 29/1037 (2013.01); H01L 29/41741 (2013.01); H01L 29/41775 (2013.01); H01L 29/42356 (2013.01); H01L 29/45 (2013.01); H01L 29/66666 (2013.01);
Abstract

A semiconductor device includes a semiconductor substrate including a first source/drain region formed in an upper portion of the semiconductor substrate, a metal silicide layer that covers a top surface of the first source/drain region, and a semiconductor pillar that penetrates the metal silicide layer and is connected to the semiconductor substrate. The semiconductor pillar includes a second source/drain region formed in an upper portion of the semiconductor pillar, a gate electrode on the metal silicide layer, with the gate electrode surrounding the semiconductor pillar in a plan view. A contact is connected to the metal silicide layer.


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