The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
May. 21, 2019

Filed:

Nov. 22, 2017
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-do, KR;

Inventors:

Yeoncheol Heo, Suwon-si, KR;

Sharma Deepak, Suwon-si, KR;

Kwanyoung Chun, Suwon-si, KR;

Assignee:

SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/423 (2006.01); H01L 29/10 (2006.01); H01L 29/78 (2006.01); H01L 27/092 (2006.01); H01L 29/06 (2006.01); H01L 21/8238 (2006.01); H01L 27/02 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7827 (2013.01); H01L 21/823885 (2013.01); H01L 27/0207 (2013.01); H01L 27/092 (2013.01); H01L 29/0649 (2013.01); H01L 29/1037 (2013.01); H01L 29/42392 (2013.01);
Abstract

A semiconductor device includes a substrate with an upper surface and a lower surface, and first to third active patterns extending from the upper surface of the substrate. The first to third active patterns are arranged adjacent to each other in a first direction. The second active pattern is disposed between the first and third active patterns. The semiconductor device also includes a first gate electrode surrounding side surfaces of the first and second active patterns, and a second gate electrode surrounding side surfaces of the third active pattern. Each of the first to third active patterns includes a first impurity region, a channel region, and a second impurity region.


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