The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 22, 2019
Filed:
Mar. 27, 2018
Samsung Electronics Co., Ltd., Suwon-si, Gyeonggi-Do, KR;
Mirco Cantoro, Suwon-si, KR;
Maria Toledano Luque, Hwaseong-si, KR;
Yeoncheol Heo, Suwon-si, KR;
Dong Il Bae, Bupyeong-Gu, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, Gyeonggi-Do, KR;
Abstract
A method for manufacturing a semiconductor device includes forming a semiconductor layer on a substrate, the semiconductor layer including a first semiconductor material and a second semiconductor material, patterning the semiconductor layer to form a preliminary active pattern, oxidizing at least two sidewalls of the preliminary active pattern to form an oxide layer on each of the at least two sidewalls of the preliminary active pattern, at least two upper patterns and a semiconductor pattern being formed in the preliminary active pattern when the oxide layers are formed, the semiconductor pattern being disposed between the at least two upper patterns, and removing the semiconductor pattern to form an active pattern, the active pattern including the at least two upper patterns. A concentration of the second semiconductor material in each of the at least two upper patterns is higher than a concentration of the second semiconductor material in the semiconductor pattern.