Yao-Chung Chang

This inventor holds 21 USPTO granted patents and 6 published patent applications, primarily in Semiconductor Technology. Top assignee: Taiwan Semiconductor Manufacturing Comp. Ltd.. Active years: 2016-2026.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Yao-Chung Chang. Retrieved from https://idiyas.com/inventor/yao-chung-chang

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Calculating rank

USPTO Granted Patents = 21 (Patent Applications = 6)

% Patents Active = 100.0

Average Co-Inventor Count = 4.3

ph-index = 2

Forward Citations = 8(Granted Patents)

Location History:

Hsinchu County, TW (2017 - 2022)
Zhubei, TW (2016 - 2024)

Company Filing History:

21 out of 42,965

Taiwan Semiconductor Manufacturing Comp. Ltd.

patents

Years Active: 2016-2026

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Areas of Expertise:

Ohmic Electrode

2DCG Semiconductor

HEMT Structure

Gallium Nitride

Device Layout Design

Vertical Group III-V

3D IC

Semiconductor Substrates

Field Plate

Active Region

Transistor Manufacturing

Bandgap

21 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 12733238 - Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device (2026-09-08),

2. 12532733 - Device layout design for improving device performance (2026-01-20),

3. 12507456 - Electrode structure for vertical group III-V device (2025-12-23),

4. 12501644 - Gallium nitride-based device with step-wise field plate and method making the same (2025-12-16),

5. 12388039 - 3D IC comprising semiconductor substrates with different bandgaps (2025-08-12),

6. 12132088 - Ohmic electrode for two-dimensional carrier gas (2DCG) semiconductor device (2024-10-29),

7. 12107156 - Semiconductor structure, HEMT structure and method of forming the same (2024-10-01),

8. 12046554 - Device layout design for improving device performance (2024-07-23),

9. 11908905 - Electrode structure for vertical group III-V device (2024-02-20),

10. 11532740 - Semiconductor structure, HEMT structure and method of forming the same (2022-12-20),

11. 11450749 - Electrode structure for vertical group III-V device (2022-09-20),

12. 11222968 - HEMT device structure and manufacturing method thereof (2022-01-11),

13. 10964804 - Semiconductor structure, HEMT structure and method of forming the same (2021-03-30),

14. 10937900 - Semiconductor structure and manufacturing method thereof (2021-03-02),

15. 10522671 - Semiconductor structure and manufacturing method thereof (2019-12-31),

Title: The Innovative Journey of Inventor Yao-Chung Chang

Introduction:

Yao-Chung Chang, a distinguished inventor hailing from Hsinchu County, Taiwan, has made significant contributions to the field of technology and innovation.

Latest Patents:

Yao-Chung Chang's latest patents include groundbreaking inventions in the realm of semiconductor technology, with a focus on enhancing efficiency and performance in electronic devices.

Career Highlights:

Throughout his illustrious career, Yao-Chung Chang has been at the forefront of technological advancements, holding key roles in leading tech companies and research institutions. His expertise in semiconductor design and development has led to the creation of cutting-edge solutions that have revolutionized the industry.

Collaborations:

Yao-Chung Chang has collaborated with top-tier engineers, researchers, and industry experts to bring his innovative ideas to life. His collaborative efforts have resulted in the successful implementation of novel technologies that have set new standards in the field.

Conclusion:

Inventor Yao-Chung Chang's relentless pursuit of innovation and his unwavering commitment to pushing the boundaries of technology have solidified his reputation as a visionary in the world of inventions. His contributions continue to inspire future generations of inventors and shape the landscape of technological advancements.

Profile summary based on public USPTO records.

Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]

6 patents pending: