The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Dec. 31, 2019
Filed:
Aug. 27, 2018
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Po-Chih Chen, Hsinchu, TW;
Jiun-Lei Yu, Hsinchu County, TW;
Yao-Chung Chang, Hsinchu County, TW;
Chun-Lin Tsai, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor device and a method for manufacturing the same. The semiconductor device comprises a substrate, a first III-V compound layer over the substrate, a second III-V compound layer on the first III-V compound layer, a third III-V compound layer on the second III-V compound layer, a source region on the third III-V compound layer, and a drain region on the third III-V compound layer. A percentage of aluminum of the third III-V compound layer is greater than that of the second III-V compound layer.