The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 02, 2021
Filed:
Apr. 22, 2016
Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, TW;
Po-Chun Liu, Hsinchu, TW;
Chi-Ming Chen, Hsinchu County, TW;
Yao-Chung Chang, Hsinchu County, TW;
Jiun-Lei Jerry Yu, Hsinchu County, TW;
Chen-Hao Chiang, Taoyuan County, TW;
Chung-Yi Yu, Hsin-Chu, TW;
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD., Hsinchu, TW;
Abstract
The present disclosure provides a semiconductor structure, including a substrate, a first III-V layer over the substrate, having a first band gap, and a second III-V layer over the first III-V layer, having a second band gap. The second III-V layer includes a first surface in contact with the first III-V layer and a second surface opposite to the first surface. The second band gap at the second surface is greater than the second band gap at the first surface. The present disclosure also provides a manufacturing method of the aforesaid semiconductor structure.