The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 23, 2024

Filed:

Feb. 15, 2022
Applicant:

Taiwan Semiconductor Manufacturing Company, Ltd., Hsinchu, TW;

Inventors:

Shih-Pang Chang, Hsinchu, TW;

Haw-Yun Wu, Hsinchu County, TW;

Yao-Chung Chang, Zhubei, TW;

Chun-Lin Tsai, Hsin-Chu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/528 (2006.01); H01L 23/522 (2006.01); H01L 29/40 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 23/528 (2013.01); H01L 23/5226 (2013.01); H01L 29/401 (2013.01); H01L 29/41758 (2013.01); H01L 29/4238 (2013.01);
Abstract

The present disclosure relates an integrated chip. The integrated chip includes an isolation region disposed within a substrate and surrounding an active area. A gate structure is disposed over the substrate and has a base region and a gate extension finger protruding outward from a sidewall of the base region along a first direction to past opposing sides of the active area. A source contact is disposed within the active area and a drain contact is disposed within the active area and is separated from the source contact by the gate extension finger. A first plurality of conductive contacts are arranged on the gate structure and separated along the first direction. The first plurality of conductive contacts are separated by distances overlying the gate extension finger.


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