Company Filing History:

19 out of 5,491

Freescale Semiconductor,inc.

Years Active: 2009-2018

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20 patents (USPTO):Sort by Forward CitationsExplore Patents

1. 10109356 - Method and apparatus for stressing a non-volatile memory (2018-10-23),

2. 9343172 - Extended protection for embedded erase of non-volatile memory cells (2016-05-17),

3. 9240224 - Non-volatile memory (NVM) with variable verify operations (2016-01-19),

4. 9142315 - Methods and systems for adjusting NVM cell bias conditions for read/verify operations to compensate for performance degradation (2015-09-22),

5. 9082493 - Adaptive erase methods for non-volatile memory (2015-07-14),

6. 9076508 - Built-in self trim for non-volatile memory reference current (2015-07-07),

7. 9030883 - Adaptive erase recovery for non-volatile memory (NVM) systems (2015-05-12),

8. 8995200 - Non-volatile memory (NVM) with dynamically adjusted reference current (2015-03-31),

9. 8964482 - Dynamic healing of non-volatile memory cells (2015-02-24),

10. 8947940 - Structure and method for healing tunnel dielectric of non-volatile memory cells (2015-02-03),

11. 8908445 - Non-volatile memory (NVM) with block-size-aware program/erase (2014-12-09),

12. 8902667 - Methods and systems for adjusting NVM cell bias conditions for program/erase operations to reduce performance degradation (2014-12-02),

13. 8879330 - Non-volatile memory (NVM) with variable verify operations (2014-11-04),

14. 8873316 - Methods and systems for adjusting NVM cell bias conditions based upon operating temperature to reduce performance degradation (2014-10-28),

15. 8760923 - Non-volatile memory (NVM) that uses soft programming (2014-06-24),

Title: Yanzhuo Wang: Innovator in Non-Volatile Memory Technology

Introduction

Yanzhuo Wang is a prominent inventor located in Austin, TX, with an impressive portfolio encompassing 20 patents. His work primarily focuses on advancing non-volatile memory technology, making significant contributions to the field with innovative methods and systems.

Latest Patents

Among Yanzhuo Wang's most recent inventions are two notable patents:

1. **Method and apparatus for stressing a non-volatile memory** - This invention outlines a method for stressing a plurality of non-volatile memory cells. It includes entering a memory cell stressing mode and applying one or more erase stress pulses to the memory cells. The technique involves determining relationships of threshold voltages and applying program stress pulses based on those evaluations.

2. **Extended protection for embedded erase of non-volatile memory cells** - This patent presents methods and systems designed to provide extended erase protection during embedded erase operations for non-volatile memory systems. An additional threshold voltage check is performed after soft programming during erase operations, ensuring enhanced protection for the memory cells involved.

Career Highlights

Yanzhuo Wang has made remarkable contributions to companies such as Freescale Semiconductor, Inc. and NXP USA, Inc. His expertise in non-volatile memory technologies has been pivotal in driving innovations within these organizations.

Collaborations

Throughout his career, Yanzhuo has worked alongside talented professionals, including coworkers Fuchen Mu and Chen He. Their collaborations have fostered an environment of innovation, allowing for the development of cutting-edge technologies in the field of non-volatile memory.

Conclusion

Yanzhuo Wang stands out as a key figure in the realm of non-volatile memory technology. With his extensive patent portfolio and collaborative efforts with various professionals, he continues to lead advancements in the industry. His inventions not only reflect personal achievement but also contribute to the broader landscape of memory technology innovation.

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