The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 02, 2014

Filed:

Jul. 25, 2012
Applicants:

Fuchen Mu, Austin, TX (US);

Yanzhuo Wang, Austin, TX (US);

Chen He, Austin, TX (US);

Richard K. Eguchi, Austin, TX (US);

Inventors:

Fuchen Mu, Austin, TX (US);

Yanzhuo Wang, Austin, TX (US);

Chen He, Austin, TX (US);

Richard K. Eguchi, Austin, TX (US);

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 11/34 (2006.01);
U.S. Cl.
CPC ...
Abstract

Non-volatile memory (NVM) systems and related methods adjust program/erase bias conditions for non-volatile memory (NVM) cells to improve performance and product lifetime of NVM systems. System embodiments include integrated NVM systems having an NVM controller, a bias voltage generator, and an NVM cell array. Further, the NVM systems can store performance degradation information and program/erase bias condition information within storage circuitry. The disclosed embodiments adjust program/erase bias conditions for the NVM cells based upon performance degradation determinations, for example, temperature-based performance degradation determinations and interim verify based performance degradation determinations.


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