The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 09, 2014

Filed:

Mar. 15, 2013
Applicants:

Chen He, Austin, TX (US);

Yanzhuo Wang, Austin, TX (US);

Inventors:

Chen He, Austin, TX (US);

Yanzhuo Wang, Austin, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01); G11C 16/08 (2006.01); G11C 8/08 (2006.01); G11C 7/22 (2006.01);
U.S. Cl.
CPC ...
G11C 7/00 (2013.01); G11C 16/08 (2013.01); G11C 8/08 (2013.01); G11C 7/22 (2013.01);
Abstract

A memory includes a plurality of blocks in which each block includes a plurality of memory cells. The memory includes a set of charge pumps which apply voltages to the plurality of blocks. A method includes selecting a block of the plurality of memory blocks; determining an array size of the selected block; determining a set of program/erase voltages based on the array size and temperature from a temperature sensor; and programming/erasing the selected block, wherein the set of program/erase voltages are applied by the set of charge pumps during the programming/erasing of the selected block.


Find Patent Forward Citations

He, Chen. (2014). Non-volatile memory (nvm) with block-size-aware program/erase (U.S. Patent No. 8908445). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/8908445

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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