The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Oct. 28, 2014
Filed:
Jul. 25, 2012
Applicants:
Fuchen Mu, Austin, TX (US);
Yanzhuo Wang, Austin, TX (US);
Inventors:
Fuchen Mu, Austin, TX (US);
Yanzhuo Wang, Austin, TX (US);
Assignee:
Freescale Semiconductor, Inc., Austin, TX (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 7/00 (2006.01);
U.S. Cl.
CPC ...
Abstract
Methods and systems are disclosed for making temperature-based adjustments to bias conditions for non-volatile memory (NVM) cells to improve performance and product lifetime of NVM systems. System embodiments include integrated NVM systems having an NVM controller, a bias voltage generator, and an NVM cell array. Further, the NVM systems can store temperature-based bias condition information in storage circuitry. The disclosed embodiments select and apply bias conditions for the NVM cells based upon temperature measurements.