Chandler, AZ, United States of America

Xu Jason Ma

USPTO Granted Patents = 8 

Average Co-Inventor Count = 2.2

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2021-2025

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8 patents (USPTO):Explore Patents

Title: **Innovator Spotlight: Xu Jason Ma**

Introduction: **Xu Jason Ma, a notable inventor based in Chandler, AZ, has made significant contributions to the field of electronics with a focus on transistor technology. With a total of 8 patents to his name, his work emphasizes innovative solutions in bias control circuits and switching devices.**

Latest Patents: **Among Xu Jason Ma's latest patents are two key innovations. The first patent describes a bias control circuit for power transistors, which incorporates a reference field effect transistor (FET) and a voltage sensor. This system is designed to optimize the voltage bias applied to the gate terminal of the FET by measuring voltage differences and translating them into appropriate control signals. The second patent involves a switching device featuring a cascode arrangement of transistors. This design utilizes multiple cascode transistors, improving the control of output voltage and enhancing the efficiency of the switching process.**

Career Highlights: **Xu Jason Ma has established himself as a key inventor at NXP USA, Inc., a global leader in semiconductor solutions. His innovative designs and patents contribute to the advancement of electronic components, playing a vital role in industry applications.**

Collaborations: **Throughout his career, Xu Jason Ma has had the opportunity to collaborate with talented professionals including Elie A Maalouf and David Edward Bien. Their combined expertise enhances the development of cutting-edge technologies within the company.**

Conclusion: **Xu Jason Ma's dedication to innovation and his impressive portfolio of patents highlight his significant impact on the electronics industry. Through his work at NXP USA, Inc., he continues to push the boundaries of technology, paving the way for future advancements in power transistor applications.**

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