The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Sep. 15, 2026
Filed:
Apr. 12, 2024
Nxp Usa, Inc., Austin, TX (US);
Elie A. Maalouf, Mesa, AZ (US);
Xu Jason MA, Chandler, AZ (US);
NXP B.V., Eindhoven, NL;
Abstract
An RF amplifier can be provided with bias control circuitry that includes memory storing stores nominal gate bias voltages for one or more transistors of the amplifier as well as gate bias offset values. The offset values can be used to adjust the gate bias voltage by increasing or reducing the gate bias voltage of the transistor(s) based on a temperature signal received from a temperature sensor. The nominal gate bias voltages and gate bias offset values are determined based upon characterization of the individual transistors of the amplifier and how adjusting the gate bias voltages of these transistors effects the overall performance of the amplifier. The memory is programmed to adjust the gate bias of the transistors to achieved selected performance characteristics such as output linearity, dynamic range, power efficiency, or a selected trade-off between such characteristics over a selected range of operating temperatures.