Chengdu, China

Xingbi Chen

This inventor holds 18 USPTO granted patents and 1 published patent application, primarily in Semiconductor Devices. Top assignees: University of Electronic Science and Technology of China, Third Dimension (3D) Semiconductor, Inc., Cheng Dian Intelligent-Power Microelectronics Design Co., Ltd of Chengdu. Active years: 1993-2015.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Xingbi Chen. Retrieved from https://idiyas.com/inventor/xingbi-chen

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 18 

% Patents Active = 38.9

Average Co-Inventor Count = 1.0

ph-index = 7

Forward Citations = 547(Granted Patents)


Location History:

  • Sichuan, CN (1993)
  • Chengdu, CN (1998 - 2015)

Company Filing History:


Years Active: 1993-2015

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Areas of Expertise:
Thyristor
IGBT
High-Voltage Devices
Lateral Diode
Power Supply
Conductive Particles
Drift Region
Dielectric Material
Voltage Sustaining
Semiconductor Technology
Floating Voltage Terminal
Alternating Conductivity
18 patents (USPTO):Explore Patents

Title: **Innovative Contributions of Xingbi Chen in Semiconductor Technology**

Introduction

Xingbi Chen, a prominent inventor located in Chengdu, China, has made significant strides in the field of semiconductor technology. With 18 patents to his name, his contributions have been instrumental in advancing the reliability and efficiency of semiconductor devices.

Latest Patents

His latest innovations include two notable patents that revolutionize the control and efficiency of thyristors. The first patent, titled "Both carriers controlled thyristor," pertains to a semiconductor device that employs two controllable current sources. This innovation aims to manage the electron and hole currents in the voltage-sustaining region of a thyristor in a conduction state, thereby minimizing current crowding effects and enhancing device reliability. The second patent focuses on a method that utilizes an insulator film containing conductive particles for fabricating lateral high voltage devices. This method improves electric displacement management across the semiconductor surface, addressing strong field issues at the boundaries of differing conductivity types.

Career Highlights

Xingbi Chen's career has been marked by his association with notable institutions, including the University of Electronic Science and Technology of China and Third Dimension Semiconductor, Inc. His work in these establishments has laid a strong foundation for his innovative projects and patent developments.

Collaborations

Throughout his career, Chen has collaborated with a variety of institutions and companies, contributing his expertise to enhance semiconductor technologies. His collaborations have further fueled his inventive endeavors, leading to successful patents that serve as benchmarks in the industry.

Conclusion

Xingbi Chen stands as a leading figure in semiconductor innovation, with his 18 patents revealing a commitment to enhancing the capabilities and reliability of these essential devices. As technology progresses, his contributions will undoubtedly lay the groundwork for future advancements in the semiconductor realm.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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