The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jan. 27, 2015

Filed:

Jan. 11, 2013
Applicant:

Xingbi Chen, Chengdu, CN;

Inventor:

Xingbi Chen, Chengdu, CN;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 23/58 (2006.01); H01L 29/861 (2006.01); H01L 31/107 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 29/78 (2006.01); H01L 29/94 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/0615 (2013.01); H01L 29/408 (2013.01); H01L 29/7811 (2013.01); H01L 29/7835 (2013.01); H01L 29/8611 (2013.01); H01L 29/94 (2013.01); H01L 29/402 (2013.01); H01L 29/0692 (2013.01); H01L 29/1083 (2013.01);
Abstract

A method or an auxiliary method to implement Optimum Variation Lateral Electric Displacement uses an insulator film(s) containing conductive particles covering on the semiconductor surface. This film(s) is capable of transmitting electric displacement into or extracting it from the semiconductor surface, or even capable of extracting some electric displacement from a part of the semiconductor surface and then transmitting it to another part of the surface. Optimum Variation Lateral Electric Displacement can be used to fabricate lateral high voltage devices, or as the edge termination for vertical high voltage devices, or to make capacitance. It can be further used to prevent strong field at the boundaries of semiconductor regions of different types of conductivity types.


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