The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Apr. 17, 2012
Filed:
Apr. 02, 2010
Xingbi Chen, Chengdu, CN;
Xingbi Chen, Chengdu, CN;
University of Electronics Science and Technology, Sichuan, CN;
Abstract
This invention provides a lateral high-voltage semiconductor device, which is a three-terminal one with two types of carriers for conduction and consists of a highest voltage region and a lowest voltage region referring to the substrate and a surface voltage-sustaining region between the highest voltage region and the lowest voltage region. The highest voltage region and the lowest region have an outer control terminal and an inner control terminal respectively, where one terminal is for controlling the flow of majorities of one conductivity type and another for controlling the flow of majorities of the other conductivity type. The potential of the inner control terminal is regulated by the voltage applied to the outer control terminal. The figure presented schematically shows a device by using an n-MOSFET to control the flow of electrons and a pnp bipolar transistor to control the flow of holes, and the potential of the base region of the pnp transistor is regulated by the voltage applied to the gate electrode of the n-MOSFET.