The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 19, 2013
Filed:
Feb. 25, 2010
Applicant:
Xingbi Chen, Chengdu, CN;
Inventor:
Xingbi Chen, Chengdu, CN;
Assignee:
University of Electronic Science and Technology, Sichuan, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/76 (2006.01); H01L 29/94 (2006.01); H01L 31/062 (2012.01); H01L 31/113 (2006.01); H01L 31/119 (2006.01);
U.S. Cl.
CPC ...
Abstract
An IGBT with almost no tail during turning-off is formed by connection of both the base and the emitter of the BJT of the IGBT at the bottom of the chip to two regions in an area of the top surface of the chip. The two regions keep non-depleted even under a maximum voltage being applied across the collector and the base of the BJT. The current through the two regions can be controlled by a gate voltage of a place close to the active region of the MISFET of the IGBT through a surface voltage-sustaining region. The injection efficiency of minorities of the IGBT can thus be controlled.