The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 31, 2015
Filed:
Aug. 27, 2013
Applicant:
Cheng Dian Intelligent-power Microelectronics Design Co., Ltd. of Chengdu, Chengdu, CN;
Inventor:
Xingbi Chen, Chengdu, CN;
Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 21/70 (2006.01); H01L 29/745 (2006.01); H01L 29/749 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7455 (2013.01); H01L 29/749 (2013.01);
Abstract
The present invention relates to a technique of semiconductor devices, and provides a semiconductor device, which uses two controllable current sources to control the electron current and the hole current of the voltage-sustaining region of a thyristor under conduction state, making the sum of the two currents from anode to cathode close to a saturated value under high voltage, thus avoiding the current crowding effect in local region and increasing the reliability of the device. Besides, it further provides a method of implementing the two current sources in the device and a method to improve the switching speed.