Lexington, MA, United States of America

Xing Chen

This inventor holds 47 USPTO granted patents and 7 published patent applications and 20 EPO patents, primarily in Plasma Technology. Top assignees: Mks Instruments, Inc., Applied Science & Technology, Inc., Applied Materials, Inc.. Active years: 1998-2024.

USPTO Granted Patents = 47 

% Patents Active = 80.9

 

Average Co-Inventor Count = 4.0

ph-index = 18

Forward Citations = 1,360(Granted Patents)


Location History:

  • Cambridge, MA (US) (1998 - 2005)
  • Winchester, MA (US) (2003 - 2007)
  • Dublin, CA (US) (2022 - 2023)
  • Lexington, MA (US) (2002 - 2024)

Company Filing History:


Years Active: 1998-2024

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Areas of Expertise:
Inductively-Coupled Plasma
Plasma Source
Gas Sampling
Dielectric Materials
Toroidal Plasma
Ozone-Producing Cells
Chemical Ionization
Power Supply
Plasma Resistance
Plasma Abatement
Microwave Energy
Doping Techniques
47 patents (USPTO):Explore Patents

Title: Innovations and Contributions of Xing Chen in Plasma Technology

Introduction: Xing Chen, an accomplished inventor based in Lexington, MA, has made significant contributions to the field of plasma technology, holding an impressive portfolio of 47 patents. His work focuses on advancements in plasma processing systems and semiconductor substrate techniques, reflecting a deep commitment to innovation in the technology sector.

Latest Patents: Among Xing Chen's latest patents are two notable inventions:

1. **Plasma source having a dielectric plasma chamber with improved plasma resistance** - This patent describes a plasma chamber designed for plasma processing systems. It features a defined plasma channel with a first and second side that are oppositely disposed along its length. The chamber consists of two sections made from dielectric material, with a unique bonding interface that enhances structural integrity.

2. **Edge protection on semiconductor substrates** - This invention outlines exemplary methods for processing semiconductor substrates, including the formation of a dielectric material layer and the removal of edge exclusion. The process also covers the application of mask material and trench etching through the semiconductor substrate, showcasing advancements in semiconductor manufacturing techniques.

Career Highlights: Xing Chen has had a prolific career, contributing to major technology firms. He has worked with MKS Instruments, Inc. and Applied Science & Technology, Inc., where he applied his expertise to develop groundbreaking technologies in the industry. His inventions reflect a commitment to pushing the boundaries of plasma applications and substrate processing.

Collaborations: Throughout his career, Xing has collaborated with notable professionals such as William M. Holber and Donald K. Smith. These partnerships have fostered innovation and enhanced the impact of his work in the plasma technology sector.

Conclusion: Xing Chen's dedication to innovation has resulted in a robust collection of patents that significantly advance the field of plasma processing and semiconductor technology. His contributions are not only a testament to his expertise but also a valuable asset to the ongoing advancement of technological solutions in the industry.

Profile summary based on public USPTO records.
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