Mks Instruments, Inc.

Applied Science & Technology, Inc.

Applied Materials, Inc.

Intel Corporation

Xing Chen

William M Holber

Donald K Smith

Eric J Georgelis

Andrew Cowe

John A Smith

Ken Tran

Ilya Pokidov

Ali Shajii

Kevin Wenzel

Feng Tian

Mark Attwood

David Lam

Jonathan Henry Palk

Timothy Roger Robinson

Mark Philip Longson

Matthew Mark Besen

Susan C Trulli

Atul Gupta

Chiu-Ying Tai

Franklin Lee

Ronald W Collins, Jr

Siddarth A Krishnan

Keith A Miller

Lan Yu

Jianxin Lei

Jothilingam Ramalingam

Shouqian Shao

Tyler Sherwood

Johannes Chiu

Chao Du

Michael Harris

Andrzej Bortkiewicz

Ilya M Bystyak

Chengxiang Ji

Zheng Xu

Jesse E Ambrosina

Jack J Schuss

Kenny King-tai Ngan

Siddharth P Nagarkatti

El Mehdi Bazizi

Tse-Yong Yao

David Matthew Burtner

Souheil Benzerrouk

Joseph F Salfelder

William Robert Entley

Ashish Pal

Lawrence P Bourget

Shu Jin

Chaolin Hu

Xiao Chun Mu

Kevin W Wenzel

Amirhasan Nourbakhsh

Erin Madden

Ki Cheol Ahn

Russell L Newman

ShouQian Shao

Shouquian Shao

John Urbahn

Atul Aupta

Michael Jason Fronckowiak

Eric Georgeus

Eric Georgelis

Andrew B Cowe

Jr Ronald W Collins

A plasma chamber of a plasma processing system is provided. The plasma chamber defines a plasma channel having a first side and a second side oppositely disposed along a length of the plasma channel. The plasma chamber comprises a first section and a second section constructed from a dielectric material and an interface that bonds together the first and second sections at between a first flange of the first section and a third flange of the second section and between a second flange of the first section and a fourth flange of the second section.

Plasma source having a dielectric plasma chamber with improved plasma resistance

Exemplary methods of processing a semiconductor substrate may include forming a layer of dielectric material on the semiconductor substrate. The methods may include performing an edge exclusion removal of the layer of dielectric material. The methods may include forming a mask material on the semiconductor substrate. The mask material may contact the dielectric material at an edge region of the semiconductor substrate. The methods may include patterning an opening in the mask material overlying a first surface of the semiconductor substrate. The methods may include etching one or more trenches through the semiconductor substrate.

Edge protection on semiconductor substrates

The present application is directed to a method of measuring the concentration of radicals in a gas stream which includes the steps of flowing a radical gas stream emitted from at least one radical gas generator to at least one processing chamber, providing at least one sampling reaction module having at least one sampling tube therein, establishing a reference temperature of the sampling tube with at least one thermal control module, diverting a portion of the radical gas steam from the radical gas generator into the sampling tube, reacting at least one reagent with at least one radical gas within a defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream, the compound stream flowing within the sampling tube, measuring a change of temperature of the sampling tube due to interaction of the chemical species within the compound stream and the sampling tube with sensor module, and calculating a concentration of the chemical species within the compound stream flowing within the sampling tube based on the measured temperature change of the sampling tube.

Multi-sensor gas sampling detection system for radical gases and short-lived molecules and method of use

Exemplary methods of forming a semiconductor structure may include forming a doped silicon layer on a semiconductor substrate. A level of doping may be increased at an increasing distance from the semiconductor substrate. The methods may include etching the doped silicon layer to define a trench extending to the semiconductor substrate. The doped silicon layer may define a sloping sidewall of the trench. The trench may be characterized by a depth of greater than or about 30 &#x3bc;m. The methods may include lining the trench with a first oxide material. The methods may include depositing a second oxide material within the trench. The methods may include forming a contact to produce a power device.

Graded doping in power devices

Methods and apparatus for passivating a target are provided herein. For example, a method includes a) supplying an oxidizing gas into an inner volume of the process chamber; b) igniting the oxidizing gas to form a plasma and oxidize at least one of a target or target material deposited on a process kit disposed in the inner volume of the process chamber; and c) performing a cycle purge comprising: c1) providing air into the process chamber to react with the at least one of the target or target material deposited on the process kit; c2) maintaining a predetermined pressure for a predetermined time within the process chamber to generate a toxic by-product caused by the air reacting with the at least one of the target or target material deposited on the process kit; and c3) exhausting the process chamber to remove the toxic by-product.

Methods and apparatus for passivating a target

The present application is directed to a multi-sensor gas sampling detection system and method for detecting and measuring the radicals in a radical gas stream and includes at least one radical gas generator in communication with at least one gas source. The radical gas generator may be configured to generate at least one radical gas stream which may be used within a processing chamber. As such, the processing chamber is in fluid communication with the radical gas generator. At least one analysis circuit in fluid communication with the radical gas generator may be used in the detection and measurement system. The analysis may be configured to receive a defined volume and/or flow rate of the radical gas stream. In one embodiment, the analysis circuit may be configured to react at least one reagent with radicals within the defined volume of the radical gas stream thereby forming at least one chemical species within at least one compound stream. At least one sensor module within the analysis circuit may be configured to measure a concentration of the chemical species within the compound stream. One or more flow measurement modules may be in fluid communication with the sensor module. During use, the flow measurement module may be configured to measure the volume of at least one of the compound stream and radical gas stream.

Methods and systems are provided for heating a dielectric preform material. An exemplary method includes inserting the preform material into a microwave cavity along a longitudinal axis of the microwave cavity and supplying the microwave cavity with microwave power having a frequency that corresponds to an axial wavelength along the longitudinal axis of the microwave cavity. The axial wavelength is greater than a length of the preform material along the longitudinal axis. The method includes heating the preform material within the microwave cavity by the microwave power and determining temperatures of the preform material at one or more locations on a surface of the preform material. The method further includes adjusting, based on the temperatures of the preform material, the microwave frequency to achieve substantially uniform heating at least on a sidewall of the preform material along the longitudinal axis.

Method and apparatus for processing dielectric materials using microwave energy

An assembly for adjusting gas flow patterns and gas-plasma interactions including a toroidal plasma chamber. The toroidal plasma chamber has an injection member, an output member, a first side member and a second side member that are all connected. The first side member has a first inner cross-sectional area in at least a portion of the first side member and a second inner cross-sectional area in at least another portion of the first side member, where the first inner cross-sectional area and the second inner-cross-sectional area being different. The second side member has a third inner cross-sectional area in at least a portion of the second side member and a fourth inner cross-sectional area in at least another portion of the second side member, where the third inner cross-sectional area and the fourth inner-cross-sectional area being different.

Toroidal plasma channel with varying cross-section areas along the channel

An apparatus for abatement of gases is provided. The apparatus includes a toroidal plasma chamber having a plurality of inlets and an outlet, and at least one chamber wall. One or more magnetic cores are disposed relative to the toroidal plasma chamber. The plasma chamber confines a toroidal plasma. A second gas inlet is positioned on the toroidal plasma chamber between a first gas inlet and the gas outlet at a distance d from the gas outlet, such that a toroidal plasma channel volume between the first gas inlet and the second gas inlet in the is substantially filled by the inert gas, the distance d based on a desired residence time of the gas to be abated.

Toroidal plasma abatement apparatus and method

Improvements in the supply of high-frequency electrical power to ozone-producing cells can be accomplished using the systems and techniques described herein. Application of a DC-DC converter operating at a switching frequency substantially greater than a load frequency, supports generation of a high-voltage AC for powering such cells, while allowing for reductions in component size and reductions in a quality factor of a load tuning circuit. Controllable power inverters used in obtaining one or more of the switching and load frequencies can be controlled using feedback techniques to provide stable, high-quality power to ozone-producing cells under variations in one or more of externally supplied power and load conditions. An inrush protection circuit can also be provided to selectively introduce a current-limiting resistance until an input DC bus has been sufficiently initialized as determined by measurements obtained from the DC bus. The current limiting resistance can be a positive-temperature coefficient thermistor.

Compact, configurable power supply for energizing ozone-producing cells

An apparatus for generating plasma includes a plasma discharge tube and a conductive coil helically wound around an outer surface of the plasma discharge tube. A waveguide is coupled to a microwave cavity surrounding the plasma discharge tube to guide the microwave energy into the plasma discharge tube such that the plasma is generated in the plasma discharge tube. The waveguide is positioned such that an electric field of the microwave energy is oriented at a predetermined angle with respect to the longitudinal axis of the plasma discharge tube. A resulting induced electric current in the conductive coil affects power absorption in the plasma discharge tube, the predetermined angle being selectable such that power absorption in the plasma discharge tube is according to a predetermined profile with respect to the longitudinal axis of the plasma discharge tube.

Microwave plasma applicator with improved power uniformity

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Lexington, MA, United States of America

Xing Chen