IDiyas

For the Inventor, By the Inventor

Shanghai, China

Xiaozhou Qian

USPTO Granted Patents = 19 

 

Average Co-Inventor Count = 3.7

ph-index = 3

Forward Citations = 75(Granted Patents)


Company Filing History:

goldMedal19 out of 622 
 
Silicon Storage Technology, Inc.
 patents

Years Active: 2016-2023

Loading Chart...
Loading Chart...
19 patents (USPTO):
1. 11798644 - Hierarchical ROM encoder system for performing address fault detection in a memory system (2023-10-24),
2. 11626176 - Wear leveling in EEPROM emulator formed of flash memory cells (2023-04-11),
3. 11257555 - Wear leveling in EEPROM emulator formed of flash memory cells (2022-02-22),
4. 11074980 - Non-volatile memory device with stored index information (2021-07-27),
5. 11038495 - Low voltage level shifter for integrated circuit (2021-06-15),
6. 10804902 - Level shifter for integrated circuit (2020-10-13),
7. 10586595 - Method and apparatus for reducing coupling between word lines and control gate lines in a flash memory system (2020-03-10),
8. 10199109 - Low power sense amplifier for a flash memory system (2019-02-05),
9. 10181354 - Sense amplifier with bit line pre-charge circuit for reading flash memory cells in an array (2019-01-15),
10. 10079061 - System and method for programming split-gate, non-volatile memory cells (2018-09-18),
11. 9997252 - High speed and low power sense amplifier (2018-06-12),
12. 9633735 - System and method to inhibit erasing of portion of sector of split gate flash memory cells (2017-04-25),
13. 9620235 - Self-timer for sense amplifier in memory device (2017-04-11),
14. 9601500 - Array of non-volatile memory cells with ROM cells (2017-03-21),
15. 9589630 - Low voltage current reference generator for a sensing amplifier (2017-03-07),

Title: Innovator Spotlight: Xiaozhou Qian - Pioneering Tech in Shanghai

Introduction:

Xiaozhou Qian, a brilliant inventor based in Shanghai, China, has garnered recognition for his exceptional contributions to the field of memory systems. With an impressive portfolio of 19 patents, Xiaozhou Qian continues to push the boundaries of innovation in his industry.

Latest Patents:

1. Hierarchical ROM encoder system for performing address fault detection in a memory system: Xiaozhou Qian's groundbreaking work includes the development of a hierarchical ROM encoder system designed to enhance address fault detection in memory systems. This innovative approach utilizes multiple levels of ROM encoders to efficiently detect and address faults within the system.

2. Wear leveling in EEPROM emulator formed of flash memory cells: Xiaozhou Qian's inventive solutions extend to wear leveling in flash memory devices emulating EEPROM functionality. By implementing an index array to store index words for logical addresses, Xiaozhou Qian has revolutionized wear leveling processes in memory systems.

Career Highlights:

Xiaozhou Qian is currently a valuable member of Silicon Storage Technology, Inc., where his profound expertise and visionary ideas have significantly influenced the development of cutting-edge memory technologies. Through his dedication and innovative spirit, Xiaozhou Qian has solidified his reputation as a trailblazer in the industry.

Collaborations:

In his professional journey, Xiaozhou Qian has had the privilege of collaborating with esteemed colleagues such as Yao Zhou and Kai Man Yue. Together, they have worked on projects that have reshaped the landscape of memory systems and solidified their positions as frontrunners in technological advancements.

Conclusion:

Xiaozhou Qian's remarkable contributions to memory systems technology underscore his passion for innovation and his commitment to driving progress in the field. His inventive patents and collaborative efforts serve as a testament to his exceptional talent and unwavering dedication to pushing the boundaries of what is possible in the realm of memory systems.

This text is generated by artificial intelligence and may not be accurate.
Please report any incorrect information to support@idiyas.com
Loading…