The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 27, 2021

Filed:

Mar. 09, 2020
Applicant:

Silicon Storage Technology, Inc., San Jose, CA (US);

Inventors:

Xiaozhou Qian, Shanghai, CN;

Xiao Yan Pi, Shanghai, CN;

Vipin Tiwari, Dublin, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 7/10 (2006.01); G11C 16/28 (2006.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 7/1039 (2013.01); G11C 7/1045 (2013.01); G11C 16/28 (2013.01);
Abstract

A memory device that includes a memory array having pluralities of non-volatile memory cells, a plurality of index memory cells each associated with a different one of the pluralities of the non-volatile memory cells, and a controller. The controller is configured to erase the pluralities of non-volatile memory cells, set each of the index memory cells to a first state, and program first data into the memory array by reading the plurality of index memory cells and determining that a first one of the index memory cells is in the first state, programming the first data into the plurality of the non-volatile memory cells associated with the first one of the index memory cells, and setting the first one of the index memory cells to a second state different from the first state.


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