The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 15, 2021
Filed:
Apr. 02, 2020
Applicant:
Silicon Storage Technology, Inc., San Jose, CA (US);
Inventors:
Ryan Mei, Shanghai, CN;
Xiaozhou Qian, Shanghai, CN;
Hieu Van Tran, San Jose, CA (US);
Claire Zhu, Shanghai, CN;
Assignee:
SILICON STORAGE TECHNOLOGY, INC., San Jose, CA (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 3/356 (2006.01); H03K 19/185 (2006.01); H03K 19/003 (2006.01); H03K 19/0185 (2006.01);
U.S. Cl.
CPC ...
H03K 3/356113 (2013.01); H03K 19/00384 (2013.01); H03K 19/018521 (2013.01); H03K 19/185 (2013.01);
Abstract
An improved level shifter is disclosed. The level shifter is able to achieve a switching time below 1 ns using a relatively low voltage for VDDL, such as 0.75 V. The improved level shifter comprises a coupling stage and a level-switching stage. A related method of level shifting is also disclosed.
Mei, Ryan. (2021). Low voltage level shifter for integrated circuit (U.S. Patent No. 11038495). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11038495
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile