The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Feb. 05, 2019
Filed:
Dec. 07, 2016
Applicant:
Silicon Storage Technology, Inc., San Jose, CA (US);
Inventors:
Xiaozhou Qian, Shanghai, CN;
Xiao Yan Pi, Shanghai, CN;
Kai Man Yue, Shanghai, CN;
Qing Rao, Shanghai, CN;
Lisa Bian, Shanghai, CN;
Assignee:
Silicon Storage Technology, Inc., San Jose, CA (US);
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
G11C 16/28 (2006.01); G11C 16/26 (2006.01); G11C 16/24 (2006.01); G11C 7/06 (2006.01); G11C 7/14 (2006.01); G11C 16/04 (2006.01); G11C 16/32 (2006.01);
U.S. Cl.
CPC ...
G11C 16/26 (2013.01); G11C 7/062 (2013.01); G11C 7/067 (2013.01); G11C 7/14 (2013.01); G11C 16/24 (2013.01); G11C 16/28 (2013.01); G11C 16/0483 (2013.01); G11C 16/32 (2013.01);
Abstract
Multiple embodiments of a low power sense amplifier for use in a flash memory system are disclosed. In some embodiments, the loading on a sense amplifier can be adjusted by selectively attaching one or more bit lines to the sense amplifier, where the one or more bit lines each is coupled to an extraneous memory cell.