The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 12, 2018
Filed:
Sep. 15, 2017
Applicant:
Silicon Storage Technology, Inc., San Jose, CA (US);
Inventors:
Xiao Yan Pi, Shanghai, CN;
Xiaozhou Qian, Shanghai, CN;
Kai Man Yue, Shanghai, CN;
Yao Zhou, Shanghai, CN;
Yaohua Zhu, Shanghai, CN;
Assignee:
Silicon Storage Technology, Inc., San Jose, CA (US);
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/06 (2006.01); G11C 16/28 (2006.01); G11C 16/08 (2006.01); G11C 7/14 (2006.01); G11C 16/24 (2006.01); G11C 7/06 (2006.01); G11C 29/02 (2006.01); G11C 7/12 (2006.01); G11C 29/12 (2006.01); G11C 29/50 (2006.01);
U.S. Cl.
CPC ...
G11C 16/28 (2013.01); G11C 7/062 (2013.01); G11C 7/12 (2013.01); G11C 7/14 (2013.01); G11C 16/08 (2013.01); G11C 16/24 (2013.01); G11C 29/025 (2013.01); G11C 2029/1204 (2013.01); G11C 2029/5006 (2013.01);
Abstract
An improved sensing circuit is disclosed that utilizes a bit line in an unused memory array to provide reference values to compare against selected cells in another memory array. A circuit that can perform a self-test for identifying bit lines with leakage currents about an acceptable threshold also is disclosed.