Xiang Hu

Title: Xiang Hu - Innovator in Semiconductor Technology

Introduction

Xiang Hu is a prominent inventor based in Shanghai, China. He has made significant contributions to the field of semiconductor technology, holding a total of 6 patents. His innovative methods and designs have advanced the capabilities of semiconductor structures.

Latest Patents

Xiang Hu's latest patents include a method for forming a semiconductor structure. This method involves providing a substrate, forming a gate electrode layer on the substrate, and performing a defluorination treatment on the gate electrode layer. After this treatment, a barrier layer made of titanium is formed on a portion of the gate electrode layer's surface. Another notable patent is for a semiconductor structure and its fabrication method. This structure includes a substrate with distinct regions, gate structures, and source-drain doped layers, showcasing a complex design that enhances semiconductor functionality.

Career Highlights

Throughout his career, Xiang Hu has worked with leading companies in the semiconductor industry, including Semiconductor Manufacturing International (Shanghai) Corporation and Semiconductor Manufacturing International (Beijing) Corporation. His experience in these organizations has allowed him to refine his skills and contribute to groundbreaking advancements in semiconductor technology.

Collaborations

Xiang Hu has collaborated with notable colleagues, including Changyong Xiao and Yihui Lin, who is a talented woman in the field. These collaborations have fostered an environment of innovation and creativity, leading to the development of advanced semiconductor solutions.

Conclusion

Xiang Hu's contributions to semiconductor technology through his patents and collaborations highlight his role as a key innovator in the industry. His work continues to influence the future of semiconductor design and manufacturing.