Semiconductor Manufacturing International (shanghai) Corporation

Semiconductor Manufacturing International (beijing) Corporation

Xiang Hu

Yi Lu

Qin Zhang

Yihui Lin

Ying Jiang

Changyong Xiao

Xiaona Zhu

Hua Wang

Kun Peng

Lian Guo Zhao

Hai Lian Wang

A method for forming a semiconductor structure in provided. The method includes providing a substrate, forming a gate electrode layer on the substrate, and performing a defluorination treatment on the gate electrode layer. The method also includes, after performing the defluorination treatment, forming a barrier layer on a portion of a surface of the gate electrode layer. The barrier layer is made of a material including titanium element.

Method for forming semiconductor structure

A semiconductor structure and a method for forming the semiconductor structure are provided. The semiconductor structure includes a substrate including a first region and a second region, a first gate structure over the first region, and first source-drain doped layers in the first region of the substrate on both sides of the first gate structure. The semiconductor structure also includes a second gate structure over the second region, and second source-drain doped layers in the second region of the substrate on both sides of the second gate structure. Further, the semiconductor structure includes a first protection layer over the second gate structure, a first conductive structure over a first source-drain doped layer, and an isolation layer over the first conductive structure. The first conductive structure is also formed on the first gate structure, and the first conductive structure has a top surface lower than the first protection layer.

Semiconductor structure and fabrication method thereof

A semiconductor structure and a method for forming the semiconductor structure are provided. The semiconductor structure includes a substrate, and a first dielectric layer, a first gate structure and a plurality of second gate structures over the substrate. A second protection layer is formed on a top of a second gate structure. A first source-drain doped layer is formed between the first gate structure and an adjacent second gate structure. The first dielectric layer covers sidewalls of the first and second gate structures, and exposes a top surface of the second protection layer. The semiconductor structure also includes a first conductive structure in the first dielectric layer over the first source-drain doped layer, and a conductive layer on the first gate structure and the first conductive structure. A top surface of the conductive layer is coplanar with a top surface of the first dielectric layer.

A method for fabricating a semiconductor device includes forming a plurality of gate structures, a source/drain doped layer, a barrier layer, and a dielectric layer on a base substrate. The barrier layer covers the entire top surfaces of the plurality of gate structures. The dielectric layer covers the source/drain doped layer, the barrier layer, and the gate structures. The method further includes forming a plurality of first vias in the dielectric layer on both sides of each gate structure above the source/drain doped layer; forming a plurality of second vias on the gate structures to expose the barrier layer; performing a pre-amorphizing implantation process on the surface of the source/drain doped layer at the bottom of the first vias; removing the barrier layer at the bottom of the second vias; and forming a metal silicide layer on the surface of the source/drain doped layer through a metal silicidation process.

Semiconductor devices and fabrication methods thereof

The present disclosure provides physically unclonable products and fabrication methods thereof. An exemplary fabrication method forming a resistor block; performing a resistance randomizing process to the resistor block to cause the resistor block to have a random resistance; forming a resistor block array using at least two resistor blocks obtained after the resistance randomizing process; and coupling at least one resistor block array with a product to form the physically unclonable product.

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Shanghai, China

Xiang Hu