The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 20, 2024
Filed:
Oct. 25, 2021
Semiconductor Manufacturing International (Beijing) Corporation, Beijing, CN;
Semiconductor Manufacturing International (Shanghai) Corporation, Shanghai, CN;
Hua Wang, Shanghai, CN;
Changyong Xiao, Shanghai, CN;
Yihui Lin, Shanghai, CN;
Qin Zhang, Shanghai, CN;
Yi Lu, Shanghai, CN;
Xiang Hu, Shanghai, CN;
Xiaona Zhu, Shanghai, CN;
Ying Jiang, Shanghai, CN;
Abstract
A method for forming a semiconductor structure in provided. The method includes providing a substrate, forming a gate electrode layer on the substrate, and performing a defluorination treatment on the gate electrode layer. The method also includes, after performing the defluorination treatment, forming a barrier layer on a portion of a surface of the gate electrode layer. The barrier layer is made of a material including titanium element.