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For the Inventor, By the Inventor

Melbourne Beach, FL, United States of America

William R Morcom

USPTO Granted Patents = 12

Average Co-Inventor Count = 2.3

ph-index = 7

Forward Citations = 195(Granted Patents)


Location History:

  • Indian Harbour Beach, FL (US) (1976)
  • Indian Harbor Beach, FL (US) (1976)
  • Melbourne Beach, FL (US) (1979 - 1986)

Company Filing History:

goldMedal12 out of 3,523 
 
Harris Corporation
 patents

Years Active: 1976-1986

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12 patents (USPTO):Explore Patents
1. 4595943 - Reduced beta vertical transistors and method of fabrication (1986-06-17),
2. 4471376 - Amorphous devices and interconnect system and method of fabrication (1984-09-11),
3. 4333100 - Aluminum Schottky contacts and silicon-aluminum interconnects for (1982-06-01),
4. 4269636 - Method of fabricating self-aligned bipolar transistor process and device (1981-05-26),
5. 4261096 - Process for forming metallic ground grid for integrated circuits (1981-04-14),
6. 4255229 - Method of reworking PROMS (1981-03-10),
7. 4255209 - Process of fabricating an improved I.sup.2 L integrated circuit (1981-03-10),
8. 4210925 - I.sup.2 L Integrated circuit and process of fabrication (1980-07-01),
9. 4184933 - Method of fabricating two level interconnects and fuse on an IC (1980-01-22),
10. 4174562 - Process for forming metallic ground grid for integrated circuits (1979-11-20),
11. 3979237 - Device isolation in integrated circuits (1976-09-07),
12. 3974517 - Metallic ground grid for integrated circuits (1976-08-10),

Title: Innovations of William R. Morcom: A Pioneering Inventor in Semiconductor Technology

Introduction: William R. Morcom is a distinguished inventor located in Melbourne Beach, Florida, recognized for his contributions to semiconductor technology. With a total of 12 patents to his name, he has made significant advancements that continue to influence the electronic industry.

Latest Patents: Among his latest inventions are two notable patents. The first is related to the "Reduced beta vertical transistors and method of fabrication," which introduces a technique to enhance the current gain of vertical transistors by adjusting the width of the base. This innovation allows for the simultaneous fabrication of vertical transistors with varying current gains. The second patent, titled "Amorphous devices and interconnect system and method of fabrication," describes a novel amorphous semiconductor device on a silicon substrate that integrates aluminum and molybdenum for advanced contacts and interconnects. This method significantly improves the efficiency and performance of semiconductor devices.

Career Highlights: William R. Morcom has built his career at Harris Corporation, a prominent company known for its technological innovations. His work there has focused on the development of advanced semiconductor technologies, contributing to the firm’s status as a leader in the industry. His patents reflect a deep understanding of material science and engineering principles.

Collaborations: Throughout his career, Morcom has collaborated with esteemed colleagues, including Hugh C. Nicolay and Thomas J. Sanders. These partnerships have fostered a creative environment that has produced groundbreaking innovations in the field of semiconductor technology.

Conclusion: William R. Morcom stands out as a pivotal figure in semiconductor innovation. His numerous patents and collaborations at Harris Corporation highlight his commitment to advancing technology. As the electronic industry continues to evolve, Morcom's contributions will likely remain influential for years to come.

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