The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
May. 26, 1981
Filed:
Dec. 29, 1978
Anthony L Rivoli, Palm Bay, FL (US);
William R Morcom, Melbourne Beach, FL (US);
Hugh C Nicolay, Melbourne Village, FL (US);
Eugene R Cox, Palm Bay, FL (US);
Harris Corporation, Melbourne, FL (US);
Abstract
A bipolar transistor process and device wherein the transistor is fabricated within a laterally isolated device region, into which is formed a lateral intradevice isolation groove prior to formation of device/active and contact regions. The lateral intradevice isolation groove with the lateral device isolation assists in self-alignment of device regions. The lateral intradevice isolation permits the simultaneous formation through a single mask of an active region and a contact region for a different active region both on the same planar surface of a semiconductor substrate and facilitates extremely close spacing of active regions at the planar surface.