The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Jun. 17, 1986
Filed:
Jan. 18, 1978
Applicant:
Inventors:
William R Morcom, Melbourne Beach, FL (US);
Jeffrey D Peters, Palm Bay, FL (US);
Assignee:
Harris Corporation, Melbourne, FL (US);
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L / ;
U.S. Cl.
CPC ...
357 48 ; 357 44 ; 357 89 ; 148175 ; 148186 ;
Abstract
The current gain, beta, of a vertical transistor having an emitter formed in an epitaxial base on a substrate collector is reduced by forming a high impurity region of the conductivity type of the base at the base-collector boundary to increase the base width greater than the vertical distance between the emitter and collector. A plurality of vertical transistors having identical emitters and a common collector may be simultaneously fabricated with different current gains by individually selecting the horizontal dimensions of the buried high impurity regions.