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For the Inventor, By the Inventor

Hsinchu, Taiwan

Wen-Hao Lee

This inventor holds 10 USPTO granted patents and 3 EPO patents. Top assignee: Ememory Technology Inc.. Active years: 2012-2019.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wen-Hao Lee. Retrieved from https://idiyas.com/inventor/wen-hao-lee

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 10

% Patents Active = 100.0

 

Average Co-Inventor Count = 2.7

ph-index = 3

Forward Citations = 30(Granted Patents)


Company Filing History:

goldMedal10 out of 438 
 
Ememory Technology Inc.
 patents

Years Active: 2012-2019

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10 patents (USPTO):Explore Patents
1. 10181520 - Method of fabricating electrically erasable programmable non-volatile memory cell structure (2019-01-15),
2. 9892928 - Electrically erasable programmable non-volatile memory cell structure (2018-02-13),
3. 9638549 - Integrated capacitance sensing module and associated system (2017-05-02),
4. 9613663 - Array structure of single-ploy nonvolatile memory (2017-04-04),
5. 9601164 - Array structure of single-ploy nonvolatile memory (2017-03-21),
6. 9530460 - Array structure of single-ploy nonvolatile memory (2016-12-27),
7. 9508396 - Array structure of single-ploy nonvolatile memory (2016-11-29),
8. 9147690 - Erasable programmable single-ploy nonvolatile memory (2015-09-29),
9. 8779520 - Erasable programmable single-ploy nonvolatile memory (2014-07-15),
10. 8120984 - High-voltage selecting circuit which can generate an output voltage without a voltage drop (2012-02-21),

Title: Innovations of Wen-Hao Lee

Introduction

Wen-Hao Lee is a prominent inventor based in Hsinchu County, Taiwan. He has made significant contributions to the field of non-volatile memory technology. With a total of 10 patents to his name, Lee's work has had a substantial impact on the industry.

Latest Patents

One of his latest patents is a method of fabricating an electrically erasable programmable non-volatile memory cell structure. This NVM cell structure includes a semiconductor substrate with a first conductivity type and a first well region with a second conductivity type. It features a floating gate transistor and an erase gate region. The first well region is positioned on a first OD region of the semiconductor substrate. The erase gate region, located on a second OD region of the semiconductor substrate, consists of a first doped region and at least one second doped region with the second conductivity type. The first doped region is situated in the semiconductor substrate and covers the second OD region, while the second doped region is found within the first doped region. Notably, the first doped region encompasses the second doped region, and the doping concentration of the second doped region is greater than that of the first doped region.

Career Highlights

Wen-Hao Lee is currently employed at Ememory Technology Inc., where he continues to innovate in the field of memory technology. His expertise and dedication have led to advancements that benefit the industry.

Collaborations

Lee has collaborated with notable coworkers, including Wei-Ren Chen and Te-Hsun Hsu, who contribute to the innovative environment at Ememory Technology Inc.

Conclusion

Wen-Hao Lee's contributions to non-volatile memory technology through his patents and collaborations highlight his role as a leading inventor in the field. His work continues to influence advancements in memory technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
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