The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Mar. 21, 2017
Filed:
Sep. 06, 2016
Applicant:
Ememory Technology Inc., Hsin-Chu, TW;
Inventors:
Wei-Ren Chen, Pingtung County, TW;
Wen-Hao Lee, Hsinchu County, TW;
Assignee:
EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); G11C 5/06 (2006.01); G11C 17/16 (2006.01); H01L 23/525 (2006.01); H01L 27/112 (2006.01); H01L 27/115 (2006.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G11C 16/0408 (2013.01); G11C 17/16 (2013.01); H01L 23/5252 (2013.01); H01L 27/11206 (2013.01); H01L 27/11526 (2013.01);
Abstract
An array structure of a single-poly nonvolatile memory includes a first MTP section and a first OTP section. The first MTP section includes a plurality of MTP cells and the first OTP section includes a plurality of OTP cells. The first MTP is connected to a first word line, a first source line, a first erase line and a plurality of bit lines. The first OTP section is connected to a second word line, a second source line and the plurality of bit lines shared with the first MTP section.