The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Dec. 27, 2016

Filed:

May. 10, 2016
Applicant:

Ememory Technology Inc., Hsin-Chu, TW;

Inventors:

Wei-Ren Chen, Pingtung County, TW;

Wen-Hao Lee, Hsinchu County, TW;

Assignee:

EMEMORY TECHNOLOGY INC., Hsin-Chu, TW;

Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
G11C 5/06 (2006.01); G11C 16/04 (2006.01); G11C 17/16 (2006.01);
U.S. Cl.
CPC ...
G11C 5/06 (2013.01); G11C 16/0408 (2013.01); G11C 17/16 (2013.01);
Abstract

An array structure of a single-poly nonvolatile memory includes a first and a second MTP sections, a first and a second OTP sections. The first MTP is connected to a first word line, a first source line, a first erase line and a plurality of bit lines. The second MTP section is connected to a second word line, a second source line and shares the first erase line and the plurality of bit lines with the first MTP section. The first OTP section is connected to a third word line and shares the first source line and the plurality of bit lines with the first MTP section. The second OTP section is connected to a fourth word line, a third source line, and shares the plurality of bit lines with the first MTP section, the second MTP section and the third OTP section.


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