logo

For the Inventor, By the Inventor

Hsinchu, Taiwan

Wei-Shang King

This inventor holds 15 USPTO granted patents. Top assignees: Mosel Vitelic Corporation, Other. Active years: 2000-2004.

IDiyas Innovation Intelligence. (2026). Inventor Profile: Wei-Shang King. Retrieved from https://idiyas.com/inventor/wei-shang-king

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

USPTO Granted Patents = 15

% Patents Active = 93.3

Average Co-Inventor Count = 1.2

ph-index = 3

Forward Citations = 48(Granted Patents)


Location History:

  • Taipei, TW (2001)
  • Taoyuan Hsien, TW (2001)
  • Hsinchu, TW (2000 - 2004)

Company Filing History:

goldMedal14 out of 442 
 
Mosel Vitelic Corporation
 patents
silverMedal1 out of 834,513 
Other
 patents

Years Active: 2000-2004

Loading Chart...
15 patents (USPTO):Explore Patents
1. 6693005 - Trench capacitor with expanded area and method of making the same (2004-02-17),
2. 6515327 - Trench capacitor with expanded area and method of making the same (2003-02-04),
3. 6423611 - Manufacturing process of capacitor (2002-07-23),
4. 6399980 - Fabrication of a T-shaped capacitor (2002-06-04),
5. 6297088 - Method for forming a deep trench capacitor of a dram cell (2001-10-02),
6. 6271079 - Method of forming a trench capacitor (2001-08-07),
7. 6261926 - Method for fabricating field oxide (2001-07-17),
8. 6255188 - Method of removing a polysilicon buffer using an etching selectivity solution (2001-07-03),
9. 6245643 - Method of removing polysilicon residual in a LOCOS isolation process using an etching selectivity solution (2001-06-12),
10. 6242357 - Method for forming a deep trench capacitor of a DRAM cell (2001-06-05),
11. 6235604 - Manufacturing process for a capacitor (2001-05-22),
12. 6153462 - Manufacturing process and structure of capacitor (2000-11-28),
13. 6117727 - Manufacturing process of capacitor (2000-09-12),
14. 6037624 - Process and structure of a modified T-shaped capacitor having a rough (2000-03-14),
15. 6027761 - Manufacturing process and structure of capacitor (2000-02-22),

Title: Innovations of Wei-Shang King

Introduction

Wei-Shang King is a prominent inventor based in Hsinchu, Taiwan. He has made significant contributions to the field of semiconductor technology, holding a total of 15 patents. His work focuses on advancements that enhance the performance and efficiency of memory cells.

Latest Patents

One of his latest patents is titled "Trench capacitor with expanded area and method of making the same." This invention provides a trench capacitor designed for use in memory cells. The trench capacitor features a vertical trench formed in a semiconductor, a doping region around the lower portion of the trench, and a collar isolation layer on the inner sidewall of the upper portion of the trench. Additionally, it includes a doped silicon liner layer that is electrically connected to the doping region, a dielectric layer on the surface of the doped silicon liner layer, and a doped silicon material inside the trench. The method for creating this trench capacitor involves several steps, including forming a vertical trench, filling a sacrificing material, and creating various layers to enhance the capacitor's functionality.

Career Highlights

Throughout his career, Wei-Shang King has worked with notable companies, including Mosel Vitelic Corporation. His expertise in semiconductor technology has allowed him to develop innovative solutions that address the challenges faced in the industry.

Collaborations

Wei-Shang King has collaborated with several talented individuals, including Houng-Chi Wei and Chien-Hung Chen. These collaborations have contributed to the advancement of his research and the successful development of his patents.

Conclusion

Wei-Shang King's contributions to semiconductor technology through his patents and collaborations highlight his role as a leading inventor in the field. His innovative work continues to influence advancements in memory cell technology.

Profile summary based on public USPTO records.
Data Sources: USPTO Patent Grant XML, Patent Center, EPO & CIPO • Normalized by IDiyas Innovation Graph. Methodology & provenance architecturePlease report any incorrect information to [email protected]
Loading…