The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Jul. 17, 2001

Filed:

May. 11, 2000
Applicant:
Inventor:

Wei-Shang King, Taoyuan Hsien, TW;

Assignee:

Mosel Vitelic, Inc., Hsinchu, TW;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 2/176 ;
U.S. Cl.
CPC ...
H01L 2/176 ;
Abstract

The present invention provides a method for fabricating a field oxide on a semiconductor substrate. A first pad layer and a first mask layer is formed successively on the semiconductor substrate. An opening is formed in the first mask layer to define a region for forming the field oxide. A first field oxide is formed in the opening, which is then removed to form a concave portion. The first pad layer exposed by the concave portion is removed to form a cavity. A second pad layer having a smaller thickness than the first pad layer is formed on the semiconductor substrate. A mask portion is formed in the sidewall of the patterned first mask layer and the cavity. The mask portion in the sidewall of the patterned first mask layer has a thickness less than 300 Å. Finally, thermal oxidation is carried out to form a second field oxide in the concave portion. By means of the local pad film thinning technique, and forming a nitride liner and a concave portion to grow the field oxide layer, the bird's beak encroachment and the thinning effect of the field oxide layer can be both inhibited. In addition, defects in the silicon substrate due to the formation of the field oxide can also be inhibited.


Find Patent Forward Citations

King, Wei-Shang. (2001). Method for fabricating field oxide (U.S. Patent No. 6261926). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/6261926

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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